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| AP20P02S/P Advanced Power Electronics Corp. Simple Drive Requirement 2.5V Gate Drive Capability Fast Switching G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 52m -18A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. GD S TO-263 The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP20P02P) are available for low-profile applications. G Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=100 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 D TO-220 S Units V V A A A W W/ Rating - 20 12 -18 -14 -50 31.25 0.25 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.0 62 Unit /W /W Data and specifications subject to change without notice 200214031 AP20P02S/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. Typ. Max. Units -20 -0.5 -0.03 52 85 -1 -25 - V V/ m m V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-8A VGS=-2.5V, ID=-5A 15 13.5 2.1 1.6 12 20 45 27 1050 410 110 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= 12 ID=-8A VDS=-16V VGS=-4.5V VDS=-10V ID=-8A RG=3.3,VGS=-4.5V RD=1.25 VGS=0V VDS=-16V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=-1.2V 1 Min. Typ. Max. Units -10 -50 -1.2 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25, IS=-10A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP20P02S/P 60 45 T C =25 C o -4.5V T C =150 o C -4.5V -4.0V -4.0V -ID , Drain Current (A) 40 -ID , Drain Current (A) -3.5V 30 -3.5V -3.0V -3.0V 20 15 -2.5V -2.5V VGS= -2.0V VGS= -2.0V 0 0 2 4 6 0 0 2.5 5 7.5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 160 2 I D = -8A T C =25 120 1.4 I D = -8A V GS = -4.5V 80 Normalized R DS(ON) RDS(ON) (m ) 0.8 40 0 0 3 6 9 12 0.2 -50 0 50 100 150 -V GS (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP20P02S/P 20 40 16 30 -ID , Drain Current (A) 12 PD (W) 8 4 0 25 50 75 100 125 150 20 10 0 0 30 60 90 120 150 T c , Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 100us Normalized Thermal Response (R thjc) 0.2 0.1 0.1 0.05 -ID (A) 10 1ms 0.02 PDM t 0.01 T Single Pulse 10ms T C =25 C Single Pulse 1 0.1 1 10 100 Duty Factor = t/T Peak T j = PDM x Rthjc + TC 100ms DC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 -V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP20P02S/P f=1.0MHz 8 10000 I D = -8A V DS = -16V -VGS , Gate to Source Voltage (V) 6 1000 Ciss 4 C (pF) Coss 100 2 Crss 0 0 5 10 15 20 10 1 7 13 19 Q G , Total Gate Charge (nC) -V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 1.2 0.9 10 -IS(A) T j =150 o C T j =25 o C -VGS(th) (V) 1.4 0.6 1 0.3 0 0.2 0.5 0.8 1.1 0 -50 0 50 o 100 150 -V SD (V) T j , Junction Temperature ( C) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP20P02S/P VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5 x RATED VDS RG G 10% S -4.5 V VGS VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE 0.8 x RATED VDS G S -1~-3mA I ID VGS QG D -4.5V QGS QGD G Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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